advance product information january 19, 2006 1 triquint semiconductor texas: phone (972)994-8465 fax (972)994-8504 email: info-mmw@tqs.com web: www.triquint.com 2-20 ghz lna with agc TGA2513-SM key features ? frequency range: 2-20 ghz ? 17 db nominal gain ? > 30 db adjustable gain with vg2 ? 16 dbm nominal p1db ? 2.5 db midband noise figure ? bias conditions: vd=5v, idq=75 ma, vg2=2v ? package dimensions: 4.0 x 4.0 x 0.9 mm product description the triquint TGA2513-SM is a packaged lna/gain block with > 30 db agc via the control gate. the lna operates from 2-20 ghz and is designed using triquints proven standard 0.15 um gate phemt production process. the TGA2513-SM provides a nominal 16 dbm of output power at 1 db gain compression with a small signal gain of 17 db. typical noise figure is < 3 db from 2-15 ghz. the TGA2513-SM is suitable for a variety of wideband electronic warfare systems such as radar warning receivers, electronic counter measures, decoys, jammers and phased array systems. evaluation boards are available upon request. lead-free and rohs compliant primary applications ? wideband gain block / lna ? x-ku point to point radio ? if & lo buffer applications note: this device is early in the characterization process prior to finalizing all electrical specifications. specifications ar e subject to change without notice. measured performance bias conditions: vd = 5 v, idq =75 ma, vg2 = 2v -21 -18 -15 -12 -9 -6 -3 0 3 6 9 12 15 18 21 2 4 6 8 10 12 14 16 18 20 frequency (ghz) gain (db) -28 -24 -20 -16 -12 -8 -4 0 4 8 12 16 20 24 28 return loss (db) gain input output 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 2 4 6 8 10 12 14 16 18 20 frequency (ghz) noise figure (db)
advance product information january 19, 2006 2 triquint semiconductor texas: phone (972)994-8465 fax (972)994-8504 email: info-mmw@tqs.com web: www.triquint.com TGA2513-SM table i maximum ratings 1/ symbol parameter value notes v + positive supply voltage 7 v 2/ v g1 gate 1 supply voltage range -2v to 0 v v g2 gate 2 supply voltage range -0.5 v to +3.5 v i + positive supply current 151 ma 2/ | i g | gate supply current 10 ma p in input continuous wave power 21 dbm 2/ p d power dissipation see note 3 2/, 3/ t ch operating channel temperature 117 c 4/, 5 / t m mounting temperature (30 seconds) 260 c t stg storage temperature -65 to 117 c 1/ these ratings represent the maximum operable values for this device. 2/ current is defined under no rf drive conditions. combinations of supply voltage, supply current, input power, and output power shall not exceed p d . 3/ for a median life time of 1e+6 hrs, power dissipation is limited to: pd(max) = (117 c C tbase c) / 32 ( c/w) 4/ junction operating temperature will directly affect the device median time to failure (t m ). for maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. 5/ these ratings apply to each individual fet.
advance product information january 19, 2006 3 triquint semiconductor texas: phone (972)994-8465 fax (972)994-8504 email: info-mmw@tqs.com web: www.triquint.com table iii thermal information parameter test conditions t ch ( o c) t jc ( q c/w) t m (hrs) q jc thermal resistance (channel to backside of carrier) vd = 5 v i d = 75 ma pdiss = 0.375 w 97 32 8.1 e+6 note: worst case condition with no rf applied, 100% of dc power is dissipated. package temperature @ 85 c table ii rf characterization table (t a = 25 c, nominal) vd = 5v, id = 75 ma vg2 = 2v vg1 = ~ -60 mv symbol parameter test condition nominal units gain small signal gain f = 2-20 ghz 17 db irl input return loss f = 2-20 ghz 12 db orl output return loss f = 2-20 ghz 10 db nf noise figure f = 2-20 ghz 3 db p 1db output power @ 1db gain compression f = 2-20 ghz 16 dbm TGA2513-SM
advance product information january 19, 2006 4 triquint semiconductor texas: phone (972)994-8465 fax (972)994-8504 email: info-mmw@tqs.com web: www.triquint.com -21 -18 -15 -12 -9 -6 -3 0 3 6 9 12 15 18 21 0 2 4 6 8 1012141618202224 frequency (ghz) gain (db) -28 -24 -20 -16 -12 -8 -4 0 4 8 12 16 20 24 28 return loss (db) gain input output 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 2 4 6 8 101214161820 frequency (ghz) noise figure (db) measured performance bias conditions: vd = 5 v, idq =75 ma, vg2 = 2v, vg1 = ~-60mv, typical TGA2513-SM
advance product information january 19, 2006 5 triquint semiconductor texas: phone (972)994-8465 fax (972)994-8504 email: info-mmw@tqs.com web: www.triquint.com TGA2513-SM measured performance bias conditions: vd = 5 v, idq =75 ma, vg2 = 2v, vg1 = ~-60mv, typical 16 18 20 22 24 26 28 30 2468101214161820 frequency(ghz) output toi dbm) 0 2 4 6 8 10 12 14 16 18 20 2 4 6 8 101214161820 frequency(ghz) p1db(dbm)
advance product information january 19, 2006 6 triquint semiconductor texas: phone (972)994-8465 fax (972)994-8504 email: info-mmw@tqs.com web: www.triquint.com measured performance * bias conditions: vd = 5 v, idq =75 ma, vg2 = 2v, vg1 = ~-60mv, typical * note: measured data is taken using connectorized evaluation boards. the reference plane is at rf connectors, and hence connector and board loss has not been de-embedded. -27 -24 -21 -18 -15 -12 -9 -6 -3 0 024681012141618202224 frequency (ghz) input return loss (db) -40 deg c 25 deg c 0 deg c +25 deg c +50 deg c +75 deg c -22 -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 024681012141618202224 frequency (ghz) output return loss (db) -40 deg c -25 deg c 0 deg c +25 deg c +50 deg c +75 deg c 0 2 4 6 8 10 12 14 16 18 20 0 2 4 6 8 10 12 14 16 18 20 22 24 frequency (ghz) gain (db) -40 deg c -25 deg c 0 deg c +25 deg c +50 deg c +75 deg c TGA2513-SM
advance product information january 19, 2006 7 triquint semiconductor texas: phone (972)994-8465 fax (972)994-8504 email: info-mmw@tqs.com web: www.triquint.com TGA2513-SM package pinout diagram ;pp *urxqg3dg pin description 1, 3, 4, 5, 7, 8, 10, 13 ground 2 rf input 6vg1 9 rf output 11 vd 12 vg2 tga 2513 date code lot code bottom view top view dot indicates pin 1
advance product information january 19, 2006 8 triquint semiconductor texas: phone (972)994-8465 fax (972)994-8504 email: info-mmw@tqs.com web: www.triquint.com TGA2513-SM mechanical drawing gaas mmic devices are susceptible to damage from electrostatic discharge. proper precautions should be observed during handling, assembly and test. %rwwrp9lhz 7rohudqfh 8qlwv pp [?pp *urxqg3dg
advance product information january 19, 2006 9 triquint semiconductor texas: phone (972)994-8465 fax (972)994-8504 email: info-mmw@tqs.com web: www.triquint.com recommended board layout assembly * TGA2513-SM gaas mmic devices are susceptible to damage from electrostatic discharge. proper precautions should be observed during handling, assembly and test. * the layout is a general purpose drawing that needs to be tuned for the specific application. pcb is ro4003 8 mil thickness, 0.5 oz standard copper cladding, with er = 3.38. 5 : 1 p f 5),1 5)287 5 : 1 p f vg (vg1)= ~- 60mv to obtain 75ma drain current vc (vg2) = 2v vd = 5v 100pf 100pf recommended bias-up procedure ? ensure no rf power is applied to the device ? pinch-off device by setting vg (vg1) to -1.5v ? increase vd to 5v while monitoring gate current ? increase vc (vg2) to 2v ? increase vg (vg1) until drain current reaches 75 ma ? apply rf power recommended bias-down procedure ? turn off rf power ? decrease vg (vg1) to -1.5v ? decrease vc (vg2) to 0 v ? decrease vd to 0 v
advance product information january 19, 2006 10 triquint semiconductor texas: phone (972)994-8465 fax (972)994-8504 email: info-mmw@tqs.com web: www.triquint.com ordering information part package style TGA2513-SM qfn 12l 4x4 surface mount recommended surface mount package assembly proper esd precautions must be followed while handling packages. clean the board with acetone. rinse with alcohol. allow the circuit to fully dry. triquint recommends using a conductive solder paste for attachment. follow solder paste and reflow oven vendors recommendations when developing a solder reflow profile. typical solder reflow profiles are listed in the table below. hand soldering is not recommended. solder paste can be applied using a stencil printer or dot placement. the volume of solder paste depends on pcb and component layout and should be well controlled to ensure consistent mechanical and electrical performance. clean the assembly with alcohol. gaas mmic devices are susceptible to damage from electrostatic discharge. proper precautions should be observed during handling, assembly and test. typical solder reflow profiles reflow profile snpb pb free ramp-up rate 3 c/sec 3 c/sec activation time and temperature 60 C 120 sec @ 140 C 160 c 60 C 180 sec @ 150 C 200 c time above melting point 60 C 150 sec 60 C 150 sec max peak temperature 240 c260 c time within 5 c of peak temperature 10 C 20 sec 10 C 20 sec ramp-down rate 4 C 6 c/sec 4 C 6 c/sec TGA2513-SM
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